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DCR1275SD
DCR1275SD
Phase Control Thyristor Advance Information
Replaces March 1998 version, DS4551-3.3 DS4551-4.0 January 2000
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC Motor Control
KEY PARAMETERS VDRM 2800V IT(AV) 1514A ITSM 28000A dVdt* 300V/s dI/dt 150A/s
*Higher dV/dt selections available
FEATURES
s Double Side Cooling s High Surge Capability s High Mean Current s Fatigue Free
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 2800 2700 2600 2500 2400 Conditions
DCR1275SD28 DCR1275SD26 DCR1275SD25 DCR1275SD24 DCR1275SD23
Tvj = 0 to 125C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: D. See Package Details for further information.
Lower voltage grades available.
CURRENT RATINGS
Tcase = 60C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1514 2379 2148 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1047 1645 1386 A A A 1/9
DCR1275SD
CURRENT RATINGS
Tcase = 80C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 1185 1860 1640 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 805 1265 1035 A A A
SURGE RATINGS
Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 22.5 2.53 x 106 28.0 3.92 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 22.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 20.0 125 125 24.0
o
Min. dc Anode dc -
Max. 0.020 0.036 0.044 0.004 0.008 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
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DCR1275SD
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. From 67% VDRM to 1000A Gate source 10V, 5 tr = 1s, Tj = 125oC At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 30V, 15 tr = 0.5s, Tj = 25oC Repetitive 50Hz Non-repetitive Typ. Max. 150 300 100 150 0.92 0.276 1.5 Units mA V/s A/s A/s V m s
dI/dt
Rate of rise of on-state current
VT(TO) rT tgd
Threshold voltage On-state slope resistance Delay time
tq
Turn-off time
IT = 1000A, tp = 1ms, Tj = 125C, VR = 50V, dIRR/dt = 20A/s, VDR = 67% VDRM, dVDR/dt = 20V/s linear
Tj = 25oC, VD = 5V Tj = 25oC, Rg-k =
500
650
s
IL IH
Latching current Holding current
300 200
1000 500
mA mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, fig.4 Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 4.0 400 0.25 30 0.25 5 10 100 5 Units V mA V V V V A W W
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DCR1275SD
CURVES
5000 Measured under pulse conditions
4000
Instantaneous on-state current, IT - (A)
3000
Tj = 125C
2000
1000
0 0.5
1.0 1.5 2.0 Instantaneous on-state voltage, VT - (V)
2.5
Fig.1 Maximum (limit) on-state characteristics
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DCR1275SD
4000
Half wave 3 phase 6 phase 3000
d.c.
Mean power dissipation - (W)
2000
1000
0 0 500 1000 1500 Mean on-state current IT(AV) - (A) 2000
2500
G SS OC Fig.2 Dissipation curves
S
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DCR1275SD
100
Table gives pulse power PGM in Watts Pulse width s 100 200 500 1ms 10ms Pulse frequency Hz 400 100 50 150 150 150 125 150 150 100 150 150 25 150 100 20 2W Tj = 25C
lim per it 9 9%
VFGM
100W 50W 20W 10W 5W
Gate trigger voltage, VGT - (V)
10
Tj = 125C
Up
Tj = -40C
1
Lowe
r limit
1%
0.1 0.001
0.01
0.1 Gate trigger current, IGT - (A)
Fig.3 Gate characteristics
1
10 IFGM
1.0 Conduction Effective thermal resistance Junction to case C/W Anode side Double side 0.036 0.020 0.038 0.022 0.040 0.024 0.043 0.027
Thermal impedance - (C/W)
d.c. Halfwave 3 phase 120 6 phase 60 0.1
Anode side cooled
Double side cooled 0.01
0.001 0.001
0.01
0.1 Time - (s)
1
10
Fig.4 Maximum (limit) transient thermal impedance - junction to case 6/9
DCR1275SD
50
I2t = I2 x t 2
Peak half sine wave on-state current - (kA)
40
30
4.0
I2t value - (A2s x 106)
20
3.0
10
I2t
2.0
0
1 ms
10
1
2
3 45 Cycles at 50Hz
1.0 50
Duration
Fig.5 Surge (non-repetitive) on-state current vs time (with 50% VRRM @ Tcase = 125C)
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DCR1275SD
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes O3.6 x 2.1 deep (One each side)
Cathode tab Cathode O76 max O48 nom O2.8 Gate O48 nom
Anode
Nominal weight: 500g Clamping force: 22kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: D
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors Gate triggering and the use of gate characteristics Recommendations for clamping power semiconductors The effect of temperature on thyristor performance Thyristor and diode measurement with a multi-meter Turn-on performance of thyristors in parallel Use of V , r on-state characteristic
TO T
Application Note Number AN4506 AN4840 AN4839 AN4870 AN4853 AN4999 AN5001
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27.0 25.4
DCR1275SD
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS4551-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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